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ContactIGBTs Modules(2658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Terminal Finish | Polarity | Max Power Dissipation | Terminal Position | Terminal Form | Base Part Number | Pin Count | Element Configuration | Number of Elements | Subcategory | Supplier Device Package | Input Capacitance | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power - Max | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Input | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | VCEsat-Max | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce | Fall Time-Max (tf) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VS-GT100DA120U | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2000 | /files/vishaysemiconductordiodesdivision-vsgt100da120u-datasheets-2444.pdf | SOT-227-4, miniBLOC | 38.3mm | 12.3mm | 25.7mm | Unknown | 4 | EAR99 | 893W | Single | 893W | 1.2kV | 1.73V | 1.2kV | 258A | Standard | 1200V | 100μA | 2.1V @ 15V, 100A | Trench | No | |||||||||||||||||||||||||||||||||||
| VS-GB50NA120UX | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2000 | /files/vishaysemiconductordiodesdivision-vsgb50na120ux-datasheets-2404.pdf | SOT-227-4, miniBLOC | 38.3mm | 12.3mm | 25.7mm | Unknown | 4 | EAR99 | 431W | Single | 431W | 1.2kV | 3.22V | 1.2kV | 84A | Standard | 1200V | 50μA | 2.8V @ 15V, 50A | NPT | No | |||||||||||||||||||||||||||||||||||
| VS-GB150LH120N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2016 | Double INT-A-PAK (3 + 4) | 14 Weeks | yes | EAR99 | Nickel (Ni) | 1.389kW | 10.6nF | Single | 1389W | 1.2kV | 1.87V | 300A | Standard | 1200V | 1mA | 1.87V @ 15V, 150A (Typ) | No | 10.6nF @ 25V | ||||||||||||||||||||||||||||||||||||||
| VS-GB300NH120N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | 150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | Double INT-A-PAK (3 + 4) | 14 Weeks | EAR99 | 1.645kW | 21.2nF | Single | 1645W | 1.2kV | 2.45V | 500A | Standard | 1200V | 5mA | 2.45V @ 15V, 300A | No | 21.2nF @ 25V | ||||||||||||||||||||||||||||||||||||||||
| VS-GB400TH120N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | Double INT-A-PAK (3 + 4) | 14 Weeks | EAR99 | 2.604kW | 32.7nF | Half Bridge | 2604W | 1.2kV | 1.9V | 800A | Standard | 1200V | 5mA | 1.9V @ 15V, 400A (Typ) | No | 32.7nF @ 25V | ||||||||||||||||||||||||||||||||||||||||
| VS-GB300AH120N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | Double INT-A-PAK (5) | 14 Weeks | 2.5kW | Single | Double INT-A-PAK | 21nF | Single | 2500W | 1.2kV | 1.9V | 620A | Standard | 1200V | 620A | 5mA | 1.9V @ 15V, 300A (Typ) | No | 21nF @ 25V | ||||||||||||||||||||||||||||||||||||||
| VS-GB600AH120N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | Double INT-A-PAK (5) | 14 Weeks | EAR99 | 3.125kW | 41nF | Single | 3125W | 1.2kV | 1.9V | 910A | Standard | 1200V | 5mA | 1.9V @ 15V, 600A (Typ) | No | 41nF @ 25V | ||||||||||||||||||||||||||||||||||||||||
| IXGN200N60 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2000 | /files/ixys-ixgn200n60a-datasheets-2113.pdf | SOT-227-4, miniBLOC | 4 | 38.000013g | 4 | yes | FAST, UL RECOGNIZED | Nickel (Ni) | 600W | UPPER | UNSPECIFIED | IXG*200N60 | 4 | 1 | Insulated Gate BIP Transistors | 9nF | SILICON | Single | ISOLATED | MOTOR CONTROL | N-CHANNEL | 600W | 600V | 100 ns | 600V | 200A | Standard | 800 ns | 20V | 6V | 200μA | 2.5V @ 15V, 100A | No | 9nF @ 25V | 500ns | ||||||||||||||||||||
| VS-GT100TP120N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | 175°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vsgt100tp120n-datasheets-2415.pdf | INT-A-PAK (3 + 4) | yes | EAR99 | NICKEL (197) | 652W | 12.8nF | Half Bridge | 652W | 1.2kV | 2.35V | 180A | Standard | 1200V | 5mA | 2.35V @ 15V, 100A | Trench | No | 12.8nF @ 30V | |||||||||||||||||||||||||||||||||||||
| APTGF30TL601G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2012 | /files/microsemicorporation-aptgf30tl601g-datasheets-2418.pdf | SP1 | 12 | EAR99 | 140W | 1 | Insulated Gate BIP Transistors | 1.35nF | Three Level Inverter | 600V | 600V | 42A | Standard | 2.45 V | 20V | 250μA | 2.45V @ 15V, 30A | NPT | No | 1.35nF @ 25V | |||||||||||||||||||||||||||||||||||
| VS-GT75NP120N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vsgt75np120n-datasheets-2421.pdf | INT-A-PAK (3 + 4) | yes | EAR99 | NICKEL (197) | 446W | 9.45nF | Single | 446W | 1.2kV | 2.08V | 150A | Standard | 1200V | 1mA | 2.08V @ 15V, 75A (Typ) | No | 9.45nF @ 30V | ||||||||||||||||||||||||||||||||||||||
| VS-GB300TH120N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | 150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vsgb300th120n-datasheets-2424.pdf | Double INT-A-PAK (3 + 4) | 14 Weeks | 7 | yes | EAR99 | Nickel (Ni) | 1.645kW | Dual | 1 | Insulated Gate BIP Transistors | 21.2nF | Half Bridge | 1645W | 1.2kV | 2.45V | 500A | Standard | 1200V | 20V | 5mA | 2.45V @ 15V, 300A | No | 21.2nF @ 25V | ||||||||||||||||||||||||||||||||
| VS-GB400AH120N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | Double INT-A-PAK (5) | 14 Weeks | yes | EAR99 | Nickel (Ni) | 2.5kW | 1 | Insulated Gate BIP Transistors | 30nF | Single | 2500W | 1.2kV | 1.9V | 650A | Standard | 1200V | 20V | 5mA | 1.9V @ 15V, 400A (Typ) | No | 30nF @ 25V | |||||||||||||||||||||||||||||||||||
| VS-GB75SA120UP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vsgb75sa120up-datasheets-2430.pdf | SOT-227-4, miniBLOC | Unknown | 4 | EAR99 | NPN | 658W | Single | 658W | 1.2kV | 3.3V | 3.8V | 250μA | Standard | 1200V | 3.8V @ 15V, 75A | NPT | No | ||||||||||||||||||||||||||||||||||||||
| VS-GB150TS60NPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | 150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2012 | INT-A-PAK (3 + 4) | 12 Weeks | 7 | EAR99 | 500W | Dual | Half Bridge | 500W | 600V | 600V | 138A | Standard | 200μA | 3V @ 15V, 150A | NPT | No | ||||||||||||||||||||||||||||||||||||||||
| VS-GB300TH120U | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | 150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vsgb300th120u-datasheets-2388.pdf | Double INT-A-PAK (3 + 4) | 14 Weeks | yes | EAR99 | Nickel (Ni) | 2.119kW | 1 | Insulated Gate BIP Transistors | 25.3nF | Half Bridge | 2119W | 1.2kV | 3.6V | 530A | Standard | 1200V | 20V | 5mA | 3.6V @ 15V, 300A | No | 25.3nF @ 30V | ||||||||||||||||||||||||||||||||||
| APTGT50H60T2G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | 1 (Unlimited) | 175°C | -40°C | RoHS Compliant | SP2 | 22 | EAR99 | No | 176W | 3.15nF | Full Bridge Inverter | 600V | 600V | 80A | Standard | 250μA | 1.9V @ 15V, 50A | Trench Field Stop | Yes | 3.15nF @ 25V | ||||||||||||||||||||||||||||||||||||||||
| VS-GB400AH120U | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | 150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vsgb400ah120u-datasheets-2392.pdf | Double INT-A-PAK (5) | 14 Weeks | EAR99 | 2.841kW | 33.7nF | Single | 2841W | 1.2kV | 3.6V | 550A | Standard | 1200V | 5mA | 3.6V @ 15V, 400A | No | 33.7nF @ 30V | |||||||||||||||||||||||||||||||||||||||
| VS-GA200HS60S1PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vsga200hs60s1pbf-datasheets-2354.pdf | INT-A-Pak | 7 | EAR99 | 830W | Dual | 32.5nF | Half Bridge | 830W | 600V | 600V | 480A | Standard | 1mA | 1.21V @ 15V, 200A | No | 32.5nF @ 30V | |||||||||||||||||||||||||||||||||||||||
| VS-GB50LP120N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | INT-A-PAK (3 + 4) | 12 Weeks | yes | EAR99 | Nickel (Ni) | 446W | 1 | Insulated Gate BIP Transistors | 4.29nF | Single | 446W | 1.2kV | 1.7V | 100A | Standard | 1200V | 20V | 1mA | 1.7V @ 15V, 50A (Typ) | No | 4.29nF @ 25V | |||||||||||||||||||||||||||||||||||
| VS-GB100DA60UP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vsgb100da60up-datasheets-2356.pdf | SOT-227-4, miniBLOC | Unknown | 4 | EAR99 | NPN | 447W | Single | 447W | 600V | 2.4V | 600V | 125A | Standard | 100μA | 2.8V @ 15V, 100A | No | |||||||||||||||||||||||||||||||||||||||
| VS-GB100TS60NPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vsgb100ts60npbf-datasheets-2358.pdf | INT-A-Pak | Unknown | 3 | EAR99 | NPN | 390W | Dual | Half Bridge | 390W | 600V | 2.6V | 600V | 108A | Standard | 100μA | 2.85V @ 15V, 100A | NPT | No | |||||||||||||||||||||||||||||||||||||
| VS-GB100LP120N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | INT-A-Pak | 12 Weeks | EAR99 | 658W | 7.43nF | Single | 658W | 1.2kV | 1.8V | 200A | Standard | 1200V | 1mA | 1.8V @ 15V, 100A (Typ) | No | 7.43nF @ 25V | ||||||||||||||||||||||||||||||||||||||||
| VS-GB200TH120N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | 150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | Double INT-A-PAK (3 + 4) | 14 Weeks | yes | EAR99 | Nickel (Ni) | 1.136kW | 1 | Insulated Gate BIP Transistors | 14.9nF | Half Bridge | 1136W | 1.2kV | 2.35V | 360A | Standard | 1200V | 20V | 5mA | 2.35V @ 15V, 200A | No | 14.9nF @ 25V | |||||||||||||||||||||||||||||||||||
| VS-GB100TP120U | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | 1 (Unlimited) | ROHS3 Compliant | 2015 | INT-A-Pak | yes | EAR99 | NICKEL (197) | 735W | 4.3nF | Half Bridge | 735W | 1.2kV | 3.9V | 150A | Standard | 1200V | 2mA | 3.9V @ 15V, 100A | No | 4.3nF @ 25V | ||||||||||||||||||||||||||||||||||||||||
| VS-GB200TS60NPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vsgb200ts60npbf-datasheets-2368.pdf | INT-A-PAK (3 + 4) | 12 Weeks | Unknown | 3 | EAR99 | NPN | 781W | Dual | Half Bridge | 781W | 600V | 2.6V | 600V | 209A | Standard | 200μA | 2.84V @ 15V, 200A | NPT | No | ||||||||||||||||||||||||||||||||||||
| VS-GB100TH120U | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vsgb100th120u-datasheets-2370.pdf | Double INT-A-PAK (3 + 4) | 14 Weeks | yes | EAR99 | Nickel (Ni) | 1.136kW | 1 | Insulated Gate BIP Transistors | 8.45nF | Half Bridge | 1136W | 1.2kV | 3.6V | 200A | Standard | 1200V | 20V | 5mA | 3.6V @ 15V, 100A | NPT | No | 8.45nF @ 20V | |||||||||||||||||||||||||||||||||
| VS-GB150TH120N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | 150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | Double INT-A-PAK (3 + 4) | 14 Weeks | yes | EAR99 | Nickel (Ni) | 1.008kW | 1 | Insulated Gate BIP Transistors | 11nF | Half Bridge | 1008W | 1.2kV | 2.35V | 300A | Standard | 1200V | 20V | 5mA | 2.35V @ 15V, 150A | No | 11nF @ 25V | |||||||||||||||||||||||||||||||||||
| VS-EMG050J60N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | 150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vsemg050j60n-datasheets-2377.pdf | EMIPAK2 | 17 | Unknown | 17 | EAR99 | No | NPN | 338W | UPPER | PIN/PEG | 17 | 2 | 9.5nF | SILICON | Half Bridge | ISOLATED | POWER CONTROL | 338W | 600V | 2.2V | 227 ns | 2.1V | 88A | Standard | 302 ns | 100μA | 2.1V @ 15V, 50A | Yes | 9.5nF @ 30V | ||||||||||||||||||||||||||
| CM75TU-12H | Powerex Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | IGBTMOD™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 1999 | Module | 17 | 17 | 310W | UPPER | UNSPECIFIED | 6 | Insulated Gate BIP Transistors | 6.6nF | SILICON | Three Phase Inverter | ISOLATED | MOTOR CONTROL | N-CHANNEL | 310W | 600V | 100 ns | 3V | 75A | Standard | 500 ns | 3 V | 20V | 1mA | 3V @ 15V, 75A | No | 6.6nF @ 10V |
