Products
Manufacturer
RFQ
Nwes
ContactMemory(55331)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | Max Supply Voltage | Min Supply Voltage | Number of Pins | Interface | Density | Pbfree Code | Number of Ports | ECCN Code | Additional Feature | Radiation Hardening | Max Frequency | Reach Compliance Code | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Qualification Status | JESD-30 Code | Supplier Device Package | Screening Level | Memory Size | Memory Type | Data Bus Width | uPs/uCs/Peripheral ICs Type | Output Characteristics | Access Time | Programming Voltage | Clock Frequency | Address Bus Width | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Parallel/Serial | Alternate Memory Width | Standby Current-Max | Word Size | Access Time (Max) | Sync/Async | I/O Type | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MT40A1G8WE-083E AIT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Tray | SDRAM - DDR4 | SYNCHRONOUS | 1.2mm | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt40a2g4we083ebtr-datasheets-5390.pdf | 78-TFBGA | 12mm | 8mm | 78 | 16 Weeks | 1 | AUTO/SELF REFRESH | compliant | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | 1.14V~1.26V | BOTTOM | 260 | 1.2V | 0.8mm | 1.26V | 1.14V | 30 | R-PBGA-B78 | AEC-Q100 | 8Gb 1G x 8 | Volatile | 1.2GHz | DRAM | Parallel | 8GX8 | 8 | 68719476736 bit | MULTI BANK PAGE BURST | ||||||||||||||||||||||||||||||||||||||||||||||||
| 7130LA20PFG | Renesas Electronics America Inc. | $20.84 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-7130la25pfgi-datasheets-7328.pdf | 64-LQFP | 12 Weeks | 4.5V~5.5V | IDT7130 | 8Kb 1K x 8 | Volatile | SRAM | Parallel | 20ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53E256M32D2DS-046 AIT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 0.6V 1.1V | 8Gb 256M x 32 | Volatile | 2.133GHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS42S16320D-6BLI | ISSI, Integrated Silicon Solution Inc | $14.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SDRAM | 1.2mm | ROHS3 Compliant | 54-TFBGA | 13mm | 3.3V | 54 | 6 Weeks | 54 | 512 Mb | 1 | EAR99 | AUTO/SELF REFRESH | No | 1 | 180mA | 3V~3.6V | BOTTOM | 3.3V | 0.8mm | 54 | 3.6V | 3V | 512Mb 32M x 16 | Volatile | 16b | 3-STATE | 5.4ns | 166MHz | 15b | DRAM | Parallel | 32MX16 | 16 | 0.004A | COMMON | 8192 | 1248FP | 1248 | ||||||||||||||||||||||||||||||||||||||||||
| IS61LPS25636A-200TQ2I-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 2 (1 Year) | 85°C | -40°C | SRAM - Synchronous, SDR | 200MHz | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/issi-is61lps25636a200tq2itr-datasheets-9122.pdf | 100-LQFP | 3.465V | 3.135V | 100 | Parallel | 200MHz | 3.135V~3.465V | 100-TQFP (14x20) | 9Mb 256K x 36 | Volatile | 3.1ns | 200MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT40A512M16LY-062E AIT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Tray | 3 (168 Hours) | SDRAM - DDR4 | ROHS3 Compliant | 96-TFBGA | 1.14V~1.26V | 8Gb 512M x 16 | Volatile | 19ns | 1.6GHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6116LA90TDB | Renesas Electronics America Inc. | $110.61 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tray | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-6116sa120db-datasheets-4340.pdf | 24-CDIP (0.300, 7.62mm) | 15 Weeks | 4.5V~5.5V | IDT6116 | 16Kb 2K x 8 | Volatile | SRAM | Parallel | 90ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6116LA120TDB | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tray | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-6116sa120db-datasheets-4340.pdf | 24-CDIP (0.300, 7.62mm) | 15 Weeks | 4.5V~5.5V | IDT6116 | 16Kb 2K x 8 | Volatile | SRAM | Parallel | 120ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT29RZ4C8DZZMHAN-18W.80D TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -25°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NAND, DRAM - LPDDR2 | ROHS3 Compliant | 1.8V | 4Gb 256M x 16 N 4G 128M x 32 LPDDR2 | Non-Volatile | 533MHz | FLASH, RAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT29GZ5A3BPGGA-53AAT.87K | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | ROHS3 Compliant | 8 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS64WV10248BLL-10CTLA3-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 3 (168 Hours) | 125°C | -40°C | SRAM - Asynchronous | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | 10 Weeks | 3.6V | 2.4V | 44 | Parallel | 8 Mb | 2 | No | 2.4V~3.6V | 44-TSOP II | 8Mb 1M x 8 | Volatile | 10ns | 20b | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS46TR16256A-125KBLA1 | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~95°C TC | Tray | 3 (168 Hours) | SDRAM - DDR3 | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 96-TFBGA | 13mm | 1.5V | 290mA | 96 | 10 Weeks | 96 | 4 Gb | 1 | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 1 | 230mA | 1.425V~1.575V | BOTTOM | 1.5V | 0.8mm | 1.575V | 1.425V | Not Qualified | AEC-Q100 | 4Gb 256M x 16 | Volatile | 16b | 3-STATE | 20ns | 800MHz | 18b | DRAM | Parallel | 256MX16 | 16 | 15ns | 0.018A | COMMON | 8192 | 48 | 48 | |||||||||||||||||||||||||||||||||||||||||
| MT53E256M32D2DS-046 AIT:B | Micron Technology Inc. | $17.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 12 Weeks | 0.6V 1.1V | 8Gb 256M x 32 | Volatile | 2.133GHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1354CV25-200AXC | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NoBL™ | Surface Mount | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, SDR | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy7c1354cv25166axc-datasheets-9396.pdf | 100-LQFP | 20mm | 1.4mm | 14mm | 2.5V | Lead Free | 220mA | 100 | 6 Weeks | 657.000198mg | 100 | 9 Mb | yes | 4 | 3A991.B.2.A | PIPELINED ARCHITECTURE | No | 1 | 220mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.375V~2.625V | QUAD | 260 | 2.5V | 0.65mm | CY7C1354 | 100 | 2.625V | 2.375V | 20 | 9Mb 256K x 36 | Volatile | 3.2ns | 200MHz | 18b | SRAM | Parallel | 256KX36 | 36b | Synchronous | ||||||||||||||||||||||||||||||||||||
| IS43TR85120A-15HBLI | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Tray | 3 (168 Hours) | SDRAM - DDR3 | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 78-TFBGA | 10.5mm | 1.5V | 78 | 78 | 4 Gb | 1 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.36 | 1 | YES | 1.425V~1.575V | BOTTOM | 1.5V | 0.8mm | 78 | 1.575V | 1.425V | 4Gb 512M x 8 | Volatile | 20ns | 667MHz | 16b | DRAM | Parallel | 512MX8 | 8 | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61VPS51236B-250B3LI-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Synchronous, SDR | 1.2mm | ROHS3 Compliant | 165-TBGA | 15mm | 13mm | 165 | 12 Weeks | 165 | yes | 1 | YES | 2.375V~2.625V | BOTTOM | NOT SPECIFIED | 2.5V | 1mm | 2.625V | 2.375V | NOT SPECIFIED | 18Mb 512K x 36 | Volatile | 2.6ns | 250MHz | SRAM | Parallel | 512KX36 | 36 | 18874368 bit | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53B256M32D1DS-062 AIT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 13 Weeks | 1.1V | 8Gb 256M x 32 | Volatile | 1600MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71V321L25PFG8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71v321l25tfgi-datasheets-6634.pdf | 64-LQFP | 12 Weeks | 3V~3.6V | IDT71V321 | 64-TQFP (14x14) | 16Kb 2K x 8 | Volatile | 25ns | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTFC8GLWDQ-3L AIT Z | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | e•MMC™ | Surface Mount | -40°C~85°C TA | Tray | FLASH - NAND | SYNCHRONOUS | 1.4mm | 100-LBGA | 18mm | 14mm | 100 | 1 | YES | 2.7V~3.6V | BOTTOM | 1mm | 3.6V | 2.7V | R-PBGA-B100 | 64Gb 8G x 8 | Non-Volatile | 2.7V | FLASH | MMC | 8GX8 | 8 | 68719476736 bit | PARALLEL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS64WV51216BLL-10CTLA3-TR | ISSI, Integrated Silicon Solution Inc | $14.01 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 2 (1 Year) | SRAM - Asynchronous | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | 10 Weeks | 44 | 8 Mb | 1 | No | 140mA | 2.4V~3.6V | 8Mb 512K x 16 | Volatile | 19b | SRAM | Parallel | 10ns | 16b | Asynchronous | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTFC8GLGDQ-AIT Z | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | e•MMC™ | Surface Mount | -40°C~85°C TA | Tray | FLASH - NAND | RoHS Compliant | 2002 | 100-LBGA | 16 Weeks | compliant | 8542.31.00.01 | 1.65V~3.6V | NOT SPECIFIED | NOT SPECIFIED | 64Gb 8G x 8 | Non-Volatile | MICROPROCESSOR CIRCUIT | FLASH | MMC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61NVF51236B-6.5TQL-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Synchronous, SDR | ROHS3 Compliant | 100-LQFP | 12 Weeks | 100 | 2.375V~2.625V | 18Mb 512K x 36 | Volatile | 6.5ns | 133MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71V321L35PFGI8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71v321l25tfgi-datasheets-6634.pdf | 64-LQFP | 10 Weeks | 3V~3.6V | IDT71V321 | 64-TQFP (14x14) | 16Kb 2K x 8 | Volatile | 35ns | SRAM | Parallel | 35ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53E256M32D2DS-053 AIT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | SYNCHRONOUS | 0.8mm | ROHS3 Compliant | 200-WFBGA | 14.5mm | 10mm | 200 | 11 Weeks | 1 | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | 0.6V 1.1V | BOTTOM | BALL | 260 | 1.1V | 0.8mm | 1.17V | 1.06V | 30 | R-PBGA-B200 | AEC-Q100 | 8Gb 256M x 32 | Volatile | 1.866GHz | DRAM | 256MX32 | 32 | 8589934592 bit | SINGLE BANK PAGE BURST | |||||||||||||||||||||||||||||||||||||||||||||||||
| IS64LF12832A-7.5TQLA3 | ISSI, Integrated Silicon Solution Inc | $23.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, SDR | 1.6mm | ROHS3 Compliant | 100-LQFP | 20mm | 3.3V | 100 | 12 Weeks | 100 | 4 Mb | yes | 4 | 3A991.B.2.A | FLOW-THROUGH ARCHITECTURE | No | 1 | 175mA | e3 | Matte Tin (Sn) - annealed | YES | 3.135V~3.465V | QUAD | 260 | 3.3V | 0.65mm | 100 | 3.135V | 40 | 4Mb 128K x 32 | Volatile | 3-STATE | 7.5ns | 117MHz | 17b | SRAM | Parallel | 128KX32 | 32 | 32b | Synchronous | COMMON | |||||||||||||||||||||||||||||||||||||||||
| CY62167GE30-45BV1XI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MoBL® | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | 1mm | ROHS3 Compliant | 2011 | 48-VFBGA | 8mm | 6mm | 48 | 12 Weeks | 48 | 3A991.B.2.A | 8542.32.00.41 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | 2.2V~3.6V | BOTTOM | 260 | 3V | 0.75mm | CY62167 | 3.6V | 2.2V | 30 | 16Mb 2M x 8 1M x 16 | Volatile | SRAM | Parallel | 1MX16 | 16 | 45ns | 16777216 bit | 8 | 45 ns | |||||||||||||||||||||||||||||||||||||||||||||||
| CY62168GE30-45BVXI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MoBL® | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | 1mm | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy62168g3045bvxit-datasheets-9884.pdf | 48-VFBGA | 8mm | 6mm | 48 | 12 Weeks | 48 | 3A991.B.2.A | 8542.32.00.41 | 1 | YES | 2.2V~3.6V | BOTTOM | NOT SPECIFIED | 3V | 0.75mm | 3.6V | 2.2V | NOT SPECIFIED | 16Mb 2M x 8 | Volatile | SRAM | Parallel | 2MX8 | 8 | 45ns | 16777216 bit | 45 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 71421LA25PFGI8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71321sa55jg-datasheets-8633.pdf | 64-LQFP | 12 Weeks | 4.5V~5.5V | IDT71421 | 64-TQFP | 16Kb 2K x 8 | Volatile | 25ns | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTFC8GLWDQ-3M AIT Z | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | e•MMC™ | Surface Mount | -40°C~85°C TA | Tray | FLASH - NAND | RoHS Compliant | 100-LBGA | 16 Weeks | compliant | 2.7V~3.6V | NOT SPECIFIED | NOT SPECIFIED | 64Gb 8G x 8 | Non-Volatile | 2.7V | FLASH | MMC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT29F256G08EBHBFB16C3WC1-FES | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 3 (168 Hours) | ROHS3 Compliant | 8 Weeks |
