| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Density | Pbfree Code | Number of Ports | Radiation Hardening | Number of Functions | Nominal Supply Current | Surface Mount | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Supply Current-Max | Qualification Status | Supplier Device Package | Memory Size | Memory Type | Output Characteristics | Access Time | Programming Voltage | Clock Frequency | Address Bus Width | Memory Format | Memory Interface | Memory Width | Write Cycle Time - Word, Page | Alternate Memory Width | Standby Current-Max | Word Size | Access Time (Max) | Sync/Async | I/O Type | Standby Voltage-Min |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| R1RW0408DGE-2PI#B0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 3 (168 Hours) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/renesas-r1rw0408dge2pib0-datasheets-5230.pdf | 36-BSOJ (0.400, 10.16mm Width) | 3.3V | Lead Free | 36 | 4 Mb | 1 | No | 100mA | 3V~3.6V | 4Mb 512K x 8 | Volatile | 19b | SRAM | Parallel | 12ns | 8b | Asynchronous | ||||||||||||||||||||||||||||||||||||
| R1RP0416DGE-2LR#B0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TA | Tube | 3 (168 Hours) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-r1rp0416dsb2prb0-datasheets-9266.pdf | 44-BSOJ (0.400, 10.16mm Width) | 5V | Lead Free | 44 | 4 Mb | 1 | No | 160mA | 4.5V~5.5V | 4Mb 256K x 16 | Volatile | 18b | SRAM | Parallel | 12ns | 16b | Asynchronous | ||||||||||||||||||||||||||||||||||||
| R1RW0408DGE-2LR#B0 | Renesas Electronics America | $31.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TA | Tube | 3 (168 Hours) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-r1rw0408dge2prb0-datasheets-9603.pdf | 36-BSOJ (0.400, 10.16mm Width) | 3.3V | Lead Free | 36 | 4 Mb | 1 | No | 100mA | 3V~3.6V | 4Mb 512K x 8 | Volatile | 19b | SRAM | Parallel | 12ns | 8b | Asynchronous | |||||||||||||||||||||||||||||||||||
| R1RW0416DGE-2PI#B0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 3 (168 Hours) | CMOS | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/renesas-r1rw0416dge2pib0-datasheets-5239.pdf | 44-BSOJ (0.400, 10.16mm Width) | 3.3V | Lead Free | 44 | 44 | 4 Mb | yes | 1 | No | 130mA | 3V~3.6V | DUAL | 3.3V | 44 | 4Mb 256K x 16 | Volatile | 3-STATE | 18b | SRAM | Parallel | 16 | 12ns | 0.005A | 16b | Asynchronous | COMMON | 3V | |||||||||||||||||||||||||
| MT47H64M8SH-25E AIT:H TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - DDR2 | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt47h64m8sh25eaith-datasheets-9959.pdf | 60-TFBGA | 12 Weeks | 1.7V~1.9V | MT47H64M8 | 512Mb 64M x 8 | Volatile | 400ps | 400MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||
| S25FL001D0FMAI001 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | Vendor Undefined | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STK14C88B-NF35UTR | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~125°C TA | Tape & Reel (TR) | Vendor Undefined | NVSRAM (Non-Volatile SRAM) | ROHS3 Compliant | 32-SOIC (0.295, 7.50mm Width) | 4.5V~5.5V | 32-SOIC | 256Kb 32K x 8 | Non-Volatile | 35ns | NVSRAM | Parallel | 35ns | ||||||||||||||||||||||||||||||||||||||||||||||
| MT29F64G08CBEFBL94C3WC1 | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | Vendor Undefined | FLASH - NAND (MLC) | ROHS3 Compliant | Die | 2.7V~3.6V | 64Gb 8G x 8 | Non-Volatile | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||
| MT40A4G4NRE-083E C:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~95°C TC | Tray | 3 (168 Hours) | SDRAM - DDR4 | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt40a4g4nre083ecb-datasheets-9573.pdf | 78-TFBGA | 1.14V~1.26V | 78-FBGA (8x12) | 16Gb 4G x 4 | Volatile | 1.2GHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||
| MT40A4G4HPR-075H:G | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TwinDie™ | 0°C~95°C TC | Tray | 3 (168 Hours) | SDRAM - DDR4 | ROHS3 Compliant | 1.14V~1.26V | 16Gb 4G x 4 | Volatile | 1.333GHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||
| MTFC32GJWDQ-4M AIT Z | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 100-LBGA | 13 Weeks | 2.7V~3.6V | NOT SPECIFIED | NOT SPECIFIED | 256Gb 32G x 8 | Non-Volatile | 2.7V | FLASH | MMC | |||||||||||||||||||||||||||||||||||||||||||||
| MT40A8G4KVA-075H:G | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT58K256M321JA-100:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~95°C TC | Tray | 3 (168 Hours) | SGRAM - GDDR5 | ROHS3 Compliant | 190-TFBGA | 1.31V~1.39V | 8Gb 256M x 32 | Volatile | 5GHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||
| MT29F64G08CBEFBWPR:F | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | Vendor Undefined | FLASH - NAND (MLC) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | 2.7V~3.6V | 48-TSOP I | 64Gb 8G x 8 | Non-Volatile | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||
| R1WV6416RSD-5SI#B0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 1 (Unlimited) | CMOS | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-r1wv6416rbg5sib0-datasheets-8644.pdf | 52-TFSOP (0.350, 8.89mm Width) | 10.89mm | 1mm | 8.99mm | 3V | Lead Free | 52 | 16 Weeks | 52 | 64 Mb | yes | 1 | No | 1 | 60mA | 2.7V~3.6V | DUAL | 3V | 0.4mm | 52 | 3.6V | 2.7V | 64Mb 8M x 8 4M x 16 | Volatile | 3-STATE | SRAM | Parallel | 55ns | 0.000024A | 55 ns | Asynchronous | COMMON | 2V | |||||||||||||||||||
| DS2433X-300-EC#TW | Maxim Integrated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | ROHS3 Compliant | 6-XBGA, FCBGA | 2.8V~6V | 4Kb 256 x 16 | Non-Volatile | EEPROM | 1-Wire® | 1μs | |||||||||||||||||||||||||||||||||||||||||||||||||
| S4013001270B0C010 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT40A256M16GE-062E:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~95°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - DDR4 | ROHS3 Compliant | 96-TFBGA | 1.14V~1.26V | 96-FBGA (9x14) | 4Gb 256M x 16 | Volatile | 1.6GHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||
| MT29F4T08CTHBBM5-3C:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT41K512M16HA-107:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~95°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - DDR3L | ROHS3 Compliant | 2017 | 96-TFBGA | 11 Weeks | 1.283V~1.45V | 96-FBGA (14x9) | 8Gb 512M x 16 | Volatile | 20ns | 933MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||
| MT29TZZZ8D6DKEZB-107 W.9H6 | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT29F64G08CBEFBWP:F | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | Vendor Undefined | FLASH - NAND (MLC) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | 6 Weeks | 2.7V~3.6V | 64Gb 8G x 8 | Non-Volatile | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||
| R1WV6416RSD-5SI#S0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Cut Tape (CT) | 1 (Unlimited) | CMOS | ASYNCHRONOUS | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-r1wv6416rbg5sib0-datasheets-8644.pdf | 52-TFSOP (0.350, 8.89mm Width) | 3V | 52 | 52 | 64 Mb | yes | 1 | YES | 2.7V~3.6V | DUAL | 0.4mm | 52 | 0.06mA | Not Qualified | 64Mb 8M x 8 4M x 16 | Volatile | 3-STATE | SRAM | Parallel | 16 | 55ns | 8 | 0.000024A | 55 ns | COMMON | 2V | |||||||||||||||||||||||||||
| MT29F128G08CFEFBWP:F | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | Vendor Undefined | FLASH - NAND (MLC) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | 2.7V~3.6V | 128Gb 16G x 8 | Non-Volatile | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||
| MT29F512G08CFCBBWP-10M:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | FLASH - NAND (MLC) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/micron-mt29f512g08cfcbbwp10mb-datasheets-5221.pdf | 48-TFSOP (0.724, 18.40mm Width) | 3.3V | 2.7V~3.6V | 48-TSOP I | 512Gb 64G x 8 | Non-Volatile | 100MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||
| R1RP0408DGE-2PR#B0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TA | Tube | 3 (168 Hours) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-r1rp0408dge2prb0-datasheets-9585.pdf | 36-BSOJ (0.400, 10.16mm Width) | 5V | Lead Free | 24 Weeks | 36 | 4 Mb | 1 | No | 130mA | 4.5V~5.5V | 4Mb 512K x 8 | Volatile | 19b | SRAM | Parallel | 12ns | 8b | Asynchronous | |||||||||||||||||||||||||||||||||||
| MT29F256G08CBCBBWP-10:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | FLASH - NAND (MLC) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/micron-mt29f256g08cbcbbwp10b-datasheets-5222.pdf | 48-TFSOP (0.724, 18.40mm Width) | 3.3V | 2.7V~3.6V | 48-TSOP I | 256Gb 32G x 8 | Non-Volatile | 100MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||
| S99F032B | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S99LV001B | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R1RP0408DGE-2LR#B0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TA | Tube | 3 (168 Hours) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-r1rp0408dge2prb0-datasheets-9585.pdf | 36-BSOJ (0.400, 10.16mm Width) | 5V | Lead Free | 36 | 4 Mb | 1 | No | 130mA | 4.5V~5.5V | 4Mb 512K x 8 | Volatile | 19b | SRAM | Parallel | 12ns | 8b | Asynchronous |
Please send RFQ , we will respond immediately.